18 March 2013 Defects study of MOCVD grown β-Ga2O3 films
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86261B (2013) https://doi.org/10.1117/12.2002913
Event: SPIE OPTO, 2013, San Francisco, California, United States
Highly (-201) oriented β-Ga2O3 films prepared by metal-organic chemical vapor deposition on (0001) sapphire substrates, undergone different post annealing temperatures to study their resistivity under harsh environment. Both of Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy (TEM) results are exposing a harmony between oxygen vacancies and gallium interstitials. TEM characterization of samples determines a relationship between interstitials and formation of screw dislocations. Cathodoluminecsnece investigated under different applied voltages is found to be applicable to study chemistry of the bulk and surface of β-Ga2O3.
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Parvaneh Ravadgar, Parvaneh Ravadgar, Ray-Hua Horng, Ray-Hua Horng, Li-Wei Tu, Li-Wei Tu, Sin-Liang Ou, Sin-Liang Ou, Hui-Ping Pan, Hui-Ping Pan, Shu-De Yao, Shu-De Yao, } "Defects study of MOCVD grown β-Ga2O3 films", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261B (18 March 2013); doi: 10.1117/12.2002913; https://doi.org/10.1117/12.2002913

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