18 March 2013 A hybrid CMOS inverter made of ink-jet printed n-channel inorganic and p-channel organic thin film transistors
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86261I (2013) https://doi.org/10.1117/12.2002894
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
In this paper, a hybrid CMOS inverter employing In-Ga-Zn oxide (IGZO) (inorganic, n-channel) and P3HT (organic, p-channel) thin film transistors (TFTs) is reported. Both inorganic and organic TFTs are fabricated by ink-jet printing technology. The field effect mobility of p and n channel TFTs are 0.0038 and 0.27 cm2/V s, respectively. The inverter exhibited an obvious inverter response for switching between logic ‘1’ and logic ‘0’, and yielded a high gain of 14 at VDD = 30 V. With the combining advantages of oxide semiconductor (n-type, high mobility) and organic (commonly p-type), it is promising to construct powerful functional CMOS circuits, such as ring oscillator and shift registers.
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X. L. Nan, Y. Wang, H. T. Dai, S. G. Wang, J. L. Zhao, X. W. Sun, "A hybrid CMOS inverter made of ink-jet printed n-channel inorganic and p-channel organic thin film transistors", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261I (18 March 2013); doi: 10.1117/12.2002894; https://doi.org/10.1117/12.2002894
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