18 March 2013 Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86261K (2013) https://doi.org/10.1117/12.2003029
Event: SPIE OPTO, 2013, San Francisco, California, United States
Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.
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Yueh-Lin Lee, Yueh-Lin Lee, Jia-Hao Chuang, Jia-Hao Chuang, Tzu-Hsuan Huang, Tzu-Hsuan Huang, Chong-Long Ho, Chong-Long Ho, Meng-Chyi Wu, Meng-Chyi Wu, "Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261K (18 March 2013); doi: 10.1117/12.2003029; https://doi.org/10.1117/12.2003029

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