18 March 2013 Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86261L (2013) https://doi.org/10.1117/12.2003166
Event: SPIE OPTO, 2013, San Francisco, California, United States
This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).
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Kuang-Po Hsueh, Po-Wei Cheng, Yi-Chang Cheng, Jinn-Kong Sheu, Yu-Hsiang Yeh, Hsien-Chin Chiu, Hsiang-Chun Wang, "Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261L (18 March 2013); doi: 10.1117/12.2003166; https://doi.org/10.1117/12.2003166


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