18 March 2013 Electrodeposited ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86261N (2013) https://doi.org/10.1117/12.2003474
Event: SPIE OPTO, 2013, San Francisco, California, United States
The bandgap control of doped-ZnO nanowires is important for tunable light emitting diodes (LEDs). Ultraviolet (UV), blue and violet LED structures based on Ag-doped ZnO /p-GaN and Cd-alloyed ZnO (Zn1-xCdxO) nanorods/p-GaN heterojunction have been fabricated by epitaxial electrodeposition at low temperatures and thermal annealing. UV electroluminescence (EL) peak around 397 nm observed from pure nanowires-ZnO/p-GaN at room temperature was shifted to 406 nm or 423 nm by using heterojunction between Ag-doped ZnO (ZnO:Ag) and Zn1-xCdxO-nanorods grown on p-GaN substrate, respectively. The electroluminescence emission threshold voltage was low at about 5.0 V and EL intensity increased with rise in the applied voltage bias. Presented experimental results demonstrate the tunable emission from silver and cadmium-doping in ZnO-based nanoLEDs.
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Thierry Pauporté, Thierry Pauporté, Oleg Lupan, Oleg Lupan, Bruno Viana, Bruno Viana, "Electrodeposited ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261N (18 March 2013); doi: 10.1117/12.2003474; https://doi.org/10.1117/12.2003474


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