18 March 2013 Impact of growth conditions on ZnO homoepitaxial films on ZnO substrates by plasma-assisted molecular beam epitaxy
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86261Q (2013) https://doi.org/10.1117/12.2004873
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
ZnO thin films were epitaxially grown on Zn-polar (0001) ZnO substrates by plasma-assisted molecular beam epitaxy. Surface root mean square (rms) roughness below 0.3 nm was achieved on a large range of growth temperatures by growing on ZnO substrates with 0.5 degree miscut angle toward [11¯00] axis. Surface treatment with acid etching and ozone exposure was required to remove contamination such as silica residual and carboxyl and carbonate groups on the surface. Removal of these surface impurities reduces the likelihood of extrinsic defect migration into the epitaxial films. High growth temperature (> 640°C) and oxygen rich conditions were required for films with terrace steps, but resulted in a very low growth rate (~30nm/h) and low photoluminescence (PL) lifetimes of lower than 50 ps. With moderate growth temperature (~610°C), higher growth rate and higher PL lifetime with up to 380 ps were achieved. EIT was used for the oxygen plasma to reduce reactive oxygen species etching of the surface, resulting in a higher growth rate and fewer defects in the films. Good crystalline quality was evident in Xray rocking curves with consistent narrow full width at half maximum (FWHM) of (0002), (101¯2) and (202¯1) peaks, indicating low threading dislocations. Both room-temperature and low-temperature photoluminescence indicated high optical quality of the resultant films with few non-radiative recombination centers.
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Ming Wei, Ming Wei, R. Casey Boutwell, R. Casey Boutwell, Winston V. Schoenfeld, Winston V. Schoenfeld, } "Impact of growth conditions on ZnO homoepitaxial films on ZnO substrates by plasma-assisted molecular beam epitaxy", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261Q (18 March 2013); doi: 10.1117/12.2004873; https://doi.org/10.1117/12.2004873
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