18 March 2013 ZnO based optical modulator in the visible wavelengths
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86261T (2013) https://doi.org/10.1117/12.2005558
Event: SPIE OPTO, 2013, San Francisco, California, United States
In order to demonstrate tunable absorption characteristics of ZnO, photodetection properties of ZnO based thin-film transistors are investigated. By controlling the occupancy of the trap states, the optical absorption coefficient of ZnO in the visible light spectrum is actively tuned with gate bias. An order of magnitude change of absorption coefficient is achieved. An optical modulator is proposed exploiting such tunable absorption mechanism.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ali K. Okyay, Levent E. Aygün, Feyza B. Oruç, "ZnO based optical modulator in the visible wavelengths", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261T (18 March 2013); doi: 10.1117/12.2005558; https://doi.org/10.1117/12.2005558


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