6 March 2013 Light from germanium tin heterostructures on silicon
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Proceedings Volume 8628, Optoelectronic Integrated Circuits XV; 86280J (2013) https://doi.org/10.1117/12.2006594
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
GeSn LED’s with Sn contents up to 4% exhibit light emission from the direct band transition although GeSn of low Sn contents is an indirect semiconductor.. The emission wavelength is red shifted compared to Ge. The redshift of the direct band transition is confirmed by different optical characterization techniques as photoluminescence, electroluminescence, photodetection and reflectivity. The photon emission energy decreases from 0.81 eV to 0.65 eV for compressively strained GeSn of 0% to 4% Sn content. Growth of GeSn up to 12% Sn is performed for which preliminary characterization results are given.
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E. Kasper, E. Kasper, M. Kittler, M. Kittler, M. Oehme, M. Oehme, T. Arguirov, T. Arguirov, } "Light from germanium tin heterostructures on silicon", Proc. SPIE 8628, Optoelectronic Integrated Circuits XV, 86280J (6 March 2013); doi: 10.1117/12.2006594; https://doi.org/10.1117/12.2006594
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