6 March 2013 Fabrication of high-efficiency heterogeneous Si/III-V integration with short optical vertical interconnect access
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Proceedings Volume 8628, Optoelectronic Integrated Circuits XV; 86280M (2013) https://doi.org/10.1117/12.2002786
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
Silicon nanophotonic platform based on a silicon-on-insulator substrate enables dense photonic integration due to transparency for light propagation and ultra-high refractive index contrast for light confinement. Here, we integrate silicon together with III-V for high-efficiency heterogeneous Silicon/III-V and short vertical optical interconnect access. The fabrication involves 3 critical processes: 1) obtaining more than 80% maximum bonded areas of Si with III-V, 2) precise alignment of III-V nano-devices on top of the passive devices and 3) vertical sidewall etch profile of Si and III-V devices. The measurement results show around 90% coupling efficiency. The realization of this heterogeneous Si/III-V integration platform will open up enormous opportunities for photonic system on silicon through integrating various devices.
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Doris K. T. Ng, Doris K. T. Ng, Jing Pu, Jing Pu, Qian Wang, Qian Wang, Kim-Peng Lim, Kim-Peng Lim, Yongqiang Wei, Yongqiang Wei, Yadong Wang, Yadong Wang, Yicheng Lai, Yicheng Lai, Seng-Tiong Ho, Seng-Tiong Ho, } "Fabrication of high-efficiency heterogeneous Si/III-V integration with short optical vertical interconnect access", Proc. SPIE 8628, Optoelectronic Integrated Circuits XV, 86280M (6 March 2013); doi: 10.1117/12.2002786; https://doi.org/10.1117/12.2002786
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