14 March 2013 Fabrication of low-loss silicon nanophotonic waveguide for photonic device integration
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Proceedings Volume 8629, Silicon Photonics VIII; 86290E (2013); doi: 10.1117/12.2002791
Event: SPIE OPTO, 2013, San Francisco, California, United States
As the basic building block for photonic device integration, silicon nanophotonic waveguide requires low-loss propagation for high-performance ultra-compact photonic device. We experimentally study SiO2 grown by two different methods (thermal oxidation and PECVD) as hard masks for Si nano-waveguides fabrication and study their effects on propagation loss. It was found that the denser and smoother quality of thermally grown SiO2 will increase the etch selectivity of Si and reduce the line-edge roughness transferred to the Si nanowaveguide sidewall, hence giving a lower loss compared to having PECVD SiO2 hard mask. With thermally grown SiO2 as hard mask, the Si nano-waveguides loss can have a loss reduction as high as 5.5 times for a 650 nm wide nanowaveguide. Using thermally grown SiO2 as hard mask will allow the Si nano-waveguide to have as low a propagation loss as direct resist mask and enable III-V semiconductor on silicon via bonding for multifunctional photonic system on chip.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Doris K. T. Ng, Kim-Peng Lim, Qian Wang, Jing Pu, Kun Tang, Yicheng Lai, Chee-Wei Lee, Seng-Tiong Ho, "Fabrication of low-loss silicon nanophotonic waveguide for photonic device integration", Proc. SPIE 8629, Silicon Photonics VIII, 86290E (14 March 2013); doi: 10.1117/12.2002791; https://doi.org/10.1117/12.2002791





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