Fabrication of low-loss silicon nanophotonic waveguide for photonic device integration

Doris K. T. Ng; Kim-Peng Lim; Qian Wang; Jing Pu; Kun Tang; Yicheng Lai; Chee-Wei Lee; Seng-Tiong Ho

doi:10.1117/12.2002791

14 March 2013 Fabrication of low-loss silicon nanophotonic waveguide for photonic device integration

Doris K. T. Ng, Kim-Peng Lim, Qian Wang, Jing Pu, Kun Tang, Yicheng Lai, Chee-Wei Lee, Seng-Tiong Ho

Proceedings Volume 8629, Silicon Photonics VIII; 86290E (2013) https://doi.org/10.1117/12.2002791
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

As the basic building block for photonic device integration, silicon nanophotonic waveguide requires low-loss propagation for high-performance ultra-compact photonic device. We experimentally study SiO₂ grown by two different methods (thermal oxidation and PECVD) as hard masks for Si nano-waveguides fabrication and study their effects on propagation loss. It was found that the denser and smoother quality of thermally grown SiO₂ will increase the etch selectivity of Si and reduce the line-edge roughness transferred to the Si nanowaveguide sidewall, hence giving a lower loss compared to having PECVD SiO₂ hard mask. With thermally grown SiO₂ as hard mask, the Si nano-waveguides loss can have a loss reduction as high as 5.5 times for a 650 nm wide nanowaveguide. Using thermally grown SiO2 as hard mask will allow the Si nano-waveguide to have as low a propagation loss as direct resist mask and enable III-V semiconductor on silicon via bonding for multifunctional photonic system on chip.

Citation Download Citation

Doris K. T. Ng, Kim-Peng Lim, Qian Wang, Jing Pu, Kun Tang, Yicheng Lai, Chee-Wei Lee, and Seng-Tiong Ho "Fabrication of low-loss silicon nanophotonic waveguide for photonic device integration", Proc. SPIE 8629, Silicon Photonics VIII, 86290E (14 March 2013); https://doi.org/10.1117/12.2002791

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