14 March 2013 Mid-infrared photonics devices in SOI
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Proceedings Volume 8629, Silicon Photonics VIII; 86290J (2013) https://doi.org/10.1117/12.2005341
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
In this paper we present silicon photonics devices designed for the 3-4μm wavelength region including waveguides, MMIs, ring resonators and Mach-Zehnder interferometers. The devices are based on silicon on insulator (SOI) platform. We show that 400-500 nm high silicon waveguides can have propagation losses as low as ~ 4 dB/cm at 3.8μm. We also demonstrate MMIs with insertion loss of 0.25 dB, high extinction ratio asymmetric Mach-Zehnder interferometers, and SOI ring resonators. This combined with our previous results reported at 3.4μm confirm that SOI is a viable platform for the 3-4 μm region and that low loss mid-infrared passive devices can be realized on it.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Z. Mashanovich, G. Z. Mashanovich, M. Nedeljkovic, M. Nedeljkovic, M. M Milošević, M. M Milošević, Y. Hu, Y. Hu, T. M. Ben Masaud, T. M. Ben Masaud, E. Jaberansary, E. Jaberansary, X. Chen, X. Chen, M. Strain, M. Strain, M. Sorel, M. Sorel, A. C. Peacock, A. C. Peacock, H. M. H. Chong, H. M. H. Chong, G. T. Reed, G. T. Reed, } "Mid-infrared photonics devices in SOI", Proc. SPIE 8629, Silicon Photonics VIII, 86290J (14 March 2013); doi: 10.1117/12.2005341; https://doi.org/10.1117/12.2005341
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