14 March 2013 Waveguide integrated silicon avalanche photodetectors
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Proceedings Volume 8629, Silicon Photonics VIII; 86290R (2013) https://doi.org/10.1117/12.2002141
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
We have fabricated silicon avalanche photodetectors integrated with silicon-on-insulator straight waveguides as well as ring resonator structures. The photodetectors comprise a p-i-n junction, with photogeneration mediated by the presence of deep-levels. For a 400 μm straight waveguide detector we measure a responsivity of 4.4 A/W at 40 V, and an avalanche multiplication gain of 640. The detectors incorporated with a ring resonator, offer a high sensitivity, wavelength selective detector option suitable for very low power applications, with a responsivity of 20 A/W at 30 V.
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Jason J. Ackert, Edgar Huante-Ceron, Kyle J. Murray, Paul E. Jessop, Andrew P. Knights, "Waveguide integrated silicon avalanche photodetectors", Proc. SPIE 8629, Silicon Photonics VIII, 86290R (14 March 2013); doi: 10.1117/12.2002141; https://doi.org/10.1117/12.2002141
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