14 March 2013 Waveguide integrated silicon avalanche photodetectors
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Proceedings Volume 8629, Silicon Photonics VIII; 86290R (2013) https://doi.org/10.1117/12.2002141
Event: SPIE OPTO, 2013, San Francisco, California, United States
We have fabricated silicon avalanche photodetectors integrated with silicon-on-insulator straight waveguides as well as ring resonator structures. The photodetectors comprise a p-i-n junction, with photogeneration mediated by the presence of deep-levels. For a 400 μm straight waveguide detector we measure a responsivity of 4.4 A/W at 40 V, and an avalanche multiplication gain of 640. The detectors incorporated with a ring resonator, offer a high sensitivity, wavelength selective detector option suitable for very low power applications, with a responsivity of 20 A/W at 30 V.
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Jason J. Ackert, Jason J. Ackert, Edgar Huante-Ceron, Edgar Huante-Ceron, Kyle J. Murray, Kyle J. Murray, Paul E. Jessop, Paul E. Jessop, Andrew P. Knights, Andrew P. Knights, "Waveguide integrated silicon avalanche photodetectors", Proc. SPIE 8629, Silicon Photonics VIII, 86290R (14 March 2013); doi: 10.1117/12.2002141; https://doi.org/10.1117/12.2002141

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