14 March 2013 A novel type of ultra-compact lateral-current-injection III/V photonic device integrated on SOI for electronic-photonic chip application
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Proceedings Volume 8629, Silicon Photonics VIII; 862913 (2013) https://doi.org/10.1117/12.2001475
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
An on-chip light source plays a determinant role in the realization of integrated photonic chips for optical interconnects technology. Several integration schemes of III/V laser on SOI platform for on-chip laser application have been proposed and demonstrated. However, most of those integration approaches do not provide effective solutions for the following two problems: effective light confinement/amplification in the III/V active region; and efficient light transfer/coupling between silicon and III/V waveguide. In this paper, a novel approach to integrate an ultra-compact Lateral-Current-Injection (LCI) laser on silicon-on-insulator (SOI) platform by direct wafer bonding technique is proposed and designed. The proposed LCI device has an ultra-thin thickness of 270 nm which is ~10 times thinner than the vertical current injection laser bonded on silicon. It has a confinement factor in the active region larger than 40% for 1 μm wide III/V active waveguide, which is the highest among all the other integration schemes proposed so far. An optical vertical interconnect access to transfer light efficiently between III/V and silicon layer is designed. The design of the shortest “Optical Via” of 4 μm which gives ~100% coupling efficiency is presented.
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Jing Pu, Jing Pu, Qian Wang, Qian Wang, Seng-Tiong Ho, Seng-Tiong Ho, } "A novel type of ultra-compact lateral-current-injection III/V photonic device integrated on SOI for electronic-photonic chip application", Proc. SPIE 8629, Silicon Photonics VIII, 862913 (14 March 2013); doi: 10.1117/12.2001475; https://doi.org/10.1117/12.2001475
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