14 March 2013 Room temperature electrically pumped silicon nano-light source at telecommunication wavelengths
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Proceedings Volume 8629, Silicon Photonics VIII; 862918 (2013) https://doi.org/10.1117/12.2004817
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
We demonstrate electrically pumped silicon nano-light source at room temperature, having very narrow emission line (<0.5nm) at 1500nm wavelength, by enhancing the electroluminescence (EL) via combination of hydrogen plasma treatment and Purcell effect. The measured output power spectral density is 0.8mW/nm/cm2, which is highest ever reported value from any silicon light emitter.
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Abdul Shakoor, Roberto Lo Savio, Paolo Cardile, Simone L. Portalupi, Dario Gerace, Karl Welna, Simona Boninelli, Giorgia Franzò, Francesco Priolo, Thomas F. Krauss, Matteo Galli, Liam O’Faolain, "Room temperature electrically pumped silicon nano-light source at telecommunication wavelengths", Proc. SPIE 8629, Silicon Photonics VIII, 862918 (14 March 2013); doi: 10.1117/12.2004817; https://doi.org/10.1117/12.2004817
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