27 February 2013 Integrated high speed hybrid silicon transmitter
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Proceedings Volume 8630, Optoelectronic Interconnects XIII; 863016 (2013) https://doi.org/10.1117/12.2009454
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
We review recent progress made on the hybrid silicon platform towards realizing an integrated high speed WDM transmitter on silicon. Using ion implantation enhanced quantum well intermixing, four band gaps are integrated on a single chip and used to demonstrate a DFB laser array operating over 200 nm from 1250 to 1450 nm. Results from an independent effort to improve on hybrid silicon EA modulator performance are also described. Together these demonstrations pave the way to realize a terabit transmitter on silicon.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Siddharth R. Jain, Siddharth R. Jain, Yongbo Tang, Yongbo Tang, Sudharsanan Srinivasan, Sudharsanan Srinivasan, Martijn J. R. Heck, Martijn J. R. Heck, John E. Bowers, John E. Bowers, } "Integrated high speed hybrid silicon transmitter", Proc. SPIE 8630, Optoelectronic Interconnects XIII, 863016 (27 February 2013); doi: 10.1117/12.2009454; https://doi.org/10.1117/12.2009454
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