InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures

Oray Orkun Cellek; Zhao-Yu He; Zhi-Yuan Lin; Ha Sul Kim; Shi Liu; Yong-Hang Zhang

doi:10.1117/12.2007612

Translator Disclaimer

4 February 2013 InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures

Oray Orkun Cellek, Zhao-Yu He, Zhi-Yuan Lin, Ha Sul Kim, Shi Liu, Yong-Hang Zhang

Author Affiliations +

Proceedings Volume 8631, Quantum Sensing and Nanophotonic Devices X; 86311I (2013) https://doi.org/10.1117/12.2007612
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Ga-free InAs/InAsSb type-II superlattice (T2SL) nBn photodetectors with very low dark current are fabricated and characterized. The typical device without antireflection coating and surface passivation has a cut-off wavelength of 13.2 micrometers, quantum efficiency (QE) of 2.5% and a background limited operating temperature of 70 K. Our analysis shows that the anticipated highest operating temperature of a 10.6 micrometer cut-off Ga-free T2SL nBn device can be 108 K, with a potential to reach 135 K if 20% QE or lower noise is achieved.

Citation Download Citation

Oray Orkun Cellek, Zhao-Yu He, Zhi-Yuan Lin, Ha Sul Kim, Shi Liu, and Yong-Hang Zhang "InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86311I (4 February 2013); https://doi.org/10.1117/12.2007612

ACCESS THE FULL ARTICLE