4 February 2013 High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices
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Abstract
Active and passive imaging in a single camera based on the combination of short-wavelength and mid-wavelength infrared detection is highly needed in a number of tracking and reconnaissance missions. Due to its versatility in band-gap engineering, Type-II InAs/GaSb/AlSb superlattice has emerged as a candidate highly suitable for this multi-spectral detection. In this paper, we report the demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattice with designed cut-off wavelengths of 2 μm and 4 μm. Taking advantages of the high performance short-wavelength and mid-wavelength single color photodetectors, back-to-back p-i-n-n-i-p photodiode structures were grown on GaSb substrate by molecular beam epitaxy. At 150 K, the short-wave channel exhibited a quantum efficiency of 55%, a dark current density of 1.0x10-9 A/cm2 at -50 mV bias voltage, providing an associated shot noise detectivity of 3.0x1013 Jones. The mid-wavelength channel exhibited a quantum efficiency of 33% and a dark current density of 2.6x10-5 A/cm2 at 300 mV bias voltage, resulting in a detectivity of 4.0x1011 Jones. The operations of the two absorber channels are selectable by changing the polarity of applied bias voltage.
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A. M. Hoang, G. Chen, A. Haddadi, M. Razeghi, "High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86311K (4 February 2013); doi: 10.1117/12.2019103; https://doi.org/10.1117/12.2019103
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