Paper
4 February 2013 Low threshold interband cascade lasers
S. Höfling, R. Weih, A. Bauer, A. Forchel, M. Kamp
Author Affiliations +
Abstract
Various semiconductor laser concepts have been researched during recent years to cover the mid-infrared (MIR) spectral range with robust, compact and reliable coherent sources operating at ambient temperatures. Among them, interband cascade lasers [1] (ICLs), which unite interband transitions with the concept of cascading active regions, have recently shown great promise as a low power consumption devices. They can emit in the tens of mW output power range between 3 and 6 μm. In this work, we describe improvements of our quantum-engineered ICLs leading towards lower threshold current densities and higher operation temperatures. This includes the active region design as well as the doping levels in different parts of the structure. Broad area lasers with unprecedented threshold current densities as low as 97 A/cm2 at room temperature are presented.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Höfling, R. Weih, A. Bauer, A. Forchel, and M. Kamp "Low threshold interband cascade lasers", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86311P (4 February 2013); https://doi.org/10.1117/12.2004680
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KEYWORDS
Doping

Quantum cascade lasers

Indium arsenide

Gallium antimonide

Semiconductor lasers

Laser damage threshold

Semiconducting wafers

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