Thermal conductivity tensor of semiconductor layers using two-wire 3-omega method

Chuanle Zhou; G. Koblmüller; M. Bichler; G. Abstreiter; M. Grayson

doi:10.1117/12.2014610

4 February 2013 Thermal conductivity tensor of semiconductor layers using two-wire 3-omega method

Chuanle Zhou, G. Koblmüller, M. Bichler, G. Abstreiter, M. Grayson

Proceedings Volume 8631, Quantum Sensing and Nanophotonic Devices X; 863129 (2013) https://doi.org/10.1117/12.2014610
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

We used the two-wire 3ω method to measure the in-plane and out-of-plane thermal conductivity of thin films and analyzed the error for all fitting parameters. We find the heater half-width, the insulating layer thickness and the out-of-plane thermal conductivity of the insulating layer the most sensitive parameters in an accurate fitting. The data of a 2.5 μm GaAs thin film suggests that the phonon mean free path in the film is limited to the film thickness, far shorter than that in the bulk material at low temperatures.

Citation Download Citation

Chuanle Zhou, G. Koblmüller, M. Bichler, G. Abstreiter, and M. Grayson "Thermal conductivity tensor of semiconductor layers using two-wire 3-omega method", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863129 (4 February 2013); https://doi.org/10.1117/12.2014610

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