4 February 2013 Room-temperature nanowire terahertz photodetectors
Author Affiliations +
Abstract
Semiconductor nanowires (NWs) represent an ideal building block for implementing rectifying diodes or plasma­ wave detectors that could operate well into the THz, thanks to the typical attofarad-order capacitance. Despite the strong effort in developing these nanostructures for a new generation of complementary metal-oxide semi­ conductors (CMOS), memory and photonic devices, their potential as radiation sensors into the Terahertz is just starting to be explored. We report on the development of NW-based field effect transistors operating as high sensitivity THz detectors in the 0.3 - 2.8 THz range. By feeding the radiation field of either an electronic THz source or a quantum cascade laser (QCL) at the gate-source electrodes by means of a wide band dipole antenna, we measured a photovoltage signal corresponding to responsivity values up to 100 V IW, with impressive noise equivalent power levels < 6 x 10-11W/Hz at room temperature and a > 300kHz modulation bandwidth. The potential scalability to even higher frequencies and the technological feasibility of realizing multi-pixel arrays coupled with QCL sources make the proposed technology highly competitive for a future generation of THz detection systems.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lorenzo Romeo, Lorenzo Romeo, Dominique Coquillant, Dominique Coquillant, Leonardo Viti, Leonardo Viti, Daniele Ercolani, Daniele Ercolani, Lucia Sorba, Lucia Sorba, Wojciech Knap , Wojciech Knap , Alessandro Tredicucci, Alessandro Tredicucci, Miriam Serena Vitiello, Miriam Serena Vitiello, } "Room-temperature nanowire terahertz photodetectors", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86312E (4 February 2013); doi: 10.1117/12.2004193; https://doi.org/10.1117/12.2004193
PROCEEDINGS
9 PAGES


SHARE
Back to Top