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4 February 2013 Room-temperature nanowire terahertz photodetectors
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Abstract
Semiconductor nanowires (NWs) represent an ideal building block for implementing rectifying diodes or plasma­ wave detectors that could operate well into the THz, thanks to the typical attofarad-order capacitance. Despite the strong effort in developing these nanostructures for a new generation of complementary metal-oxide semi­ conductors (CMOS), memory and photonic devices, their potential as radiation sensors into the Terahertz is just starting to be explored. We report on the development of NW-based field effect transistors operating as high sensitivity THz detectors in the 0.3 - 2.8 THz range. By feeding the radiation field of either an electronic THz source or a quantum cascade laser (QCL) at the gate-source electrodes by means of a wide band dipole antenna, we measured a photovoltage signal corresponding to responsivity values up to 100 V IW, with impressive noise equivalent power levels < 6 x 10-11W/Hz at room temperature and a > 300kHz modulation bandwidth. The potential scalability to even higher frequencies and the technological feasibility of realizing multi-pixel arrays coupled with QCL sources make the proposed technology highly competitive for a future generation of THz detection systems.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lorenzo Romeo, Dominique Coquillant, Leonardo Viti, Daniele Ercolani, Lucia Sorba, Wojciech Knap , Alessandro Tredicucci, and Miriam Serena Vitiello "Room-temperature nanowire terahertz photodetectors", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86312E (4 February 2013); https://doi.org/10.1117/12.2004193
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