4 February 2013 Recent advances in GaSb-based structures for mid-infrared emitting lasers: spectroscopic study
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There are reviewed the optical properties of two kind of active regions of mid infrared laser devices both grown on GaSb substrates: GaInAsSb/AlGaInAsSb type I QWs for laser diodes and InAs/GaInAsSb type II QWs for interband cascade lasers. There are presented their crucial optical properties and the related current challenges with respect to the device performances. This covers such issues as spectral tenability of the emission via the structure parameters, the band gap discontinuities, carrier loss mechanisms and oscillator strengths. For that, spectroscopic techniques have been used (photoluminescence and its temperature dependence, and photoreflectance) and combined with the energy level calculations based on effective mass approximation and kp theory. Eventually, the potential for further material optimization and prospects for the improved device performances are also discussed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grzegorz Sęk, Grzegorz Sęk, Marcin Motyka, Marcin Motyka, Filip Janiak, Filip Janiak, Krzysztof Ryczko, Krzysztof Ryczko, Jan Misiewicz, Jan Misiewicz, Adam Bauer, Adam Bauer, Matthias Dallner, Matthias Dallner, Robert Weih, Robert Weih, Sven Höfling, Sven Höfling, Alfred Forchel, Alfred Forchel, Sofiane Belahsene, Sofiane Belahsene, Guilhem Boissier, Guilhem Boissier, Yves Rouillard, Yves Rouillard, } "Recent advances in GaSb-based structures for mid-infrared emitting lasers: spectroscopic study", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86312O (4 February 2013); doi: 10.1117/12.2016699; https://doi.org/10.1117/12.2016699


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