4 February 2013 Investigation of temperature dependence on heterojunction bipolar light-emitting transistors embedded InGaAs/GaAs quantum wells
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Abstract
In this work, an analytical study of the temperature dependence of current gain and ideality factor (η) has been performed for the heterojunction bipolar light emitting transistor (HBLET). In order to utilize the radiative recombination, the structure of HBT embedded two quantum wells in the base region which can improve the radiation efficiency. Compare with the convention HBT, the temperature dependence of current gain increases 42.5% with increasing temperature from 350K followed by a decrease towards 300K. Variation of gain with temperature is different from that the characteristic of HBT adding another advantage in favor of the HBLET. The ηB of these devices are similar, revealing that the space-charge recombination dominates the overall base current. The high output power of HBLET is 962 μW at 88 mA. These results reveal that the HBLET which combine electrical and optical characteristic device.
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T. H. Huang, T. H. Huang, H. J. Chang, H. J. Chang, K. M. Huang, K. M. Huang, S. Y. Chiu, S. Y. Chiu, Y. L. Lee, Y. L. Lee, W. J. Hong, W. J. Hong, C. L. Ho, C. L. Ho, M. C. Wu, M. C. Wu, } "Investigation of temperature dependence on heterojunction bipolar light-emitting transistors embedded InGaAs/GaAs quantum wells", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86312S (4 February 2013); doi: 10.1117/12.2002750; https://doi.org/10.1117/12.2002750
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