29 March 2013 Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultrahigh efficiency phosphor-free white light emitting diodes
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Abstract
One of the grand challenges for future solid state lighting is the development of high efficiency, phosphor-free white light emitting diodes (LEDs). In this context, we have investigated the molecular beam epitaxial growth and characterization of nanowire LEDs on Si, wherein intrinsic white-light emission is achieved by incorporating selforganized InGaN quantum dots in defect-free GaN nanowires on a single chip. We have further demonstrated that, with the incorporation of p-type modulation doping and AlGaN electron blocking layer, InGaN/GaN dot-in-a-wire white LEDs can exhibit nearly zero efficiency droop and significantly enhanced internal quantum efficiency (up to ~57%) at room-temperature.
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Zetian Mi, Hieu Pham Trung Nguyen, Shaofei Zhang, Kai Cui, Mehrdad Djavid, "Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultrahigh efficiency phosphor-free white light emitting diodes", Proc. SPIE 8634, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X, 86340B (29 March 2013); doi: 10.1117/12.2004498; https://doi.org/10.1117/12.2004498
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