29 March 2013 Multi-spectral InAs/GaAs-based quantum dot infrared photodetector with quaternary (InAlGaAs) capping operates at low bias voltage
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Abstract
The quantum dot infrared photodetector is an emerging technology for advanced imaging. Multi-color imaging technologies are favored as they extend the boundary of applications of the device. We report multi-spectral performance of MBE grown InGaAs/GaAs (device A) and InAs/GaAs (device B) based photodetector with In0.21Al0.21Ga0.58As capping at 77K. Spectral response measurement of device A shows the presence of a strong photoresponse at 10.2μm. Device B exhibits a four color response (5.7, 9.0, 14.5, 17 and 20 μm) over a broad range (5-20μm) at very low bias voltage.
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Sourav Adhikary, Sourav Adhikary, Subhananda Chakrabarti, Subhananda Chakrabarti, Yigit Aytac, Yigit Aytac, A.G.U. Perera, A.G.U. Perera, } "Multi-spectral InAs/GaAs-based quantum dot infrared photodetector with quaternary (InAlGaAs) capping operates at low bias voltage", Proc. SPIE 8634, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X, 86340V (29 March 2013); doi: 10.1117/12.2002730; https://doi.org/10.1117/12.2002730
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