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21 February 2013 Laser cooling with rare-earth doped direct band gap semiconductors
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Proceedings Volume 8638, Laser Refrigeration of Solids VI; 863806 (2013)
Event: SPIE OPTO, 2013, San Francisco, California, United States
We present a theoretical scheme for laser cooling with ytterbium doped indium phosphide (Yb3+:InP). Yb3+:InP is a rareearth doped direct band-gap semiconductor. The cooling process in our system is based on thermal quenching of excited ytterbium ions. The mechanism of cooling in our system consists of laser excitation of ytterbium ions in the long wavelength tail of the Yb3+absorption spectrum followed by thermal quenching of excited ions accompanied by phonon absorption providing cooling. The band-to-band radiative recombination completing the cooling cycle removes energy from the system. This new approach to laser cooling of solids permits an increase in the efficiency of the cooling cycle approximately by the order, to accelerate the cooling process considerably, and allows cooling with pump wavelengths shorter than the mean fluorescence wavelength.
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Galina Nemova and Raman Kashyap "Laser cooling with rare-earth doped direct band gap semiconductors", Proc. SPIE 8638, Laser Refrigeration of Solids VI, 863806 (21 February 2013);

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