11 March 2013 Accurate measurement of external quantum efficiency in semiconductors
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Proceedings Volume 8638, Laser Refrigeration of Solids VI; 86380H (2013) https://doi.org/10.1117/12.2007519
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
The state of current research in laser cooling of semiconductors is reviewed. Record external quantum efficiency (99.5%) is obtained for a GaAs/InGaP heterostructure bonded to a dome lens at 100 K by All-optical Scanning Laser Calorimetry (ASLC). Pulsed-Power-dependent photoluminescence measurement (Pulsed-PDPL) is proved to be an efficient way to determine the quantum efficiency and screen the sample quality before processing and fabrication. Second harmonic generation (767nm) from a 5ns Er:YAG laser is used as the pump source for the pulsed-PDPL experiment.
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Chengao Wang, Chengao Wang, Mansoor Sheik-Bahae, Mansoor Sheik-Bahae, Jeffrey Cederberg, Jeffrey Cederberg, Daniel Bender, Daniel Bender, } "Accurate measurement of external quantum efficiency in semiconductors", Proc. SPIE 8638, Laser Refrigeration of Solids VI, 86380H (11 March 2013); doi: 10.1117/12.2007519; https://doi.org/10.1117/12.2007519
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