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13 March 2013 Progress and challenges in industrial fabrication of wafer-fused VCSELs emitting in the 1310 nm band for high-speed wavelength division multiplexing applications
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Abstract
Building coarse wavelength division multiplexing (WDM), 4×10 Gbps VCSEL transmitter modules has the promise for dramatic decreasing power consumption. Over the last years, we have demonstrated continuous improvements of parameters and reliability of wafer fused long-wavelength VCSELs. Progress and challenges in industrial fabrication of wafer-fused VCSELs emitting in the 1310 nm band for high speed WDM applications are reviewed.
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V. Iakovlev, A. Sirbu, Z. Micković, D. Ellafi, G. Suruceanu, A. Mereuta, A. Caliman, and E. Kapon "Progress and challenges in industrial fabrication of wafer-fused VCSELs emitting in the 1310 nm band for high-speed wavelength division multiplexing applications", Proc. SPIE 8639, Vertical-Cavity Surface-Emitting Lasers XVII, 863904 (13 March 2013); https://doi.org/10.1117/12.2003759
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