13 March 2013 28 Gb/s 850 nm oxide VCSEL development at Avago
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Avago’s 850nm oxide VCSEL for applications requiring modulation at 25-28G has been designed for -3dB bandwidths in excess of 18GHz over an extended temperature range of 0-85C. The VCSEL has been optimized to minimize DBR mirror thermal resistivity, electrical resistance and optical losses from free carrier absorption. The active region is designed for superior differential gain to enable high optical bandwidths. The small-signal modulation response has been characterized and the large-signal eye diagrams show excellent high-speed performance. Characterization data on other link parameters such as relative intensity noise and spectral width will also be presented.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingyi Wang, Jingyi Wang, Mark Keever, Mark Keever, Zheng-Wen Feng, Zheng-Wen Feng, Thomas Fanning, Thomas Fanning, Chen Chu, Chen Chu, Aadi Sridhara, Aadi Sridhara, Friedhelm Hopfer, Friedhelm Hopfer, Terry Sale, Terry Sale, An-Nien Cheng, An-Nien Cheng, Bing Shao, Bing Shao, Li Ding, Li Ding, Pengyue Wen, Pengyue Wen, Hsu-Hao Chang, Hsu-Hao Chang, Charlie Wang, Charlie Wang, David Chak Wang Hui, David Chak Wang Hui, Laura Giovane, Laura Giovane, } "28 Gb/s 850 nm oxide VCSEL development at Avago", Proc. SPIE 8639, Vertical-Cavity Surface-Emitting Lasers XVII, 86390K (13 March 2013); doi: 10.1117/12.2004521; https://doi.org/10.1117/12.2004521


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