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13 March 2013 28 Gb/s 850 nm oxide VCSEL development at Avago
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Abstract
Avago’s 850nm oxide VCSEL for applications requiring modulation at 25-28G has been designed for -3dB bandwidths in excess of 18GHz over an extended temperature range of 0-85C. The VCSEL has been optimized to minimize DBR mirror thermal resistivity, electrical resistance and optical losses from free carrier absorption. The active region is designed for superior differential gain to enable high optical bandwidths. The small-signal modulation response has been characterized and the large-signal eye diagrams show excellent high-speed performance. Characterization data on other link parameters such as relative intensity noise and spectral width will also be presented.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingyi Wang, Mark Keever, Zheng-Wen Feng, Thomas Fanning, Chen Chu, Aadi Sridhara, Friedhelm Hopfer, Terry Sale, An-Nien Cheng, Bing Shao, Li Ding, Pengyue Wen, Hsu-Hao Chang, Charlie Wang, David Chak Wang Hui, and Laura Giovane "28 Gb/s 850 nm oxide VCSEL development at Avago", Proc. SPIE 8639, Vertical-Cavity Surface-Emitting Lasers XVII, 86390K (13 March 2013); https://doi.org/10.1117/12.2004521
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