13 March 2013 Development of a high-power vertical-cavity surface-emitting laser array with ion-implanted current apertures
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Abstract
Vertical-Cavity Surface-Emitting Lasers (VCSELs) are very attractive to high power light sources owing to the advantageous configuration of two-dimensional arrays and being free from catastrophic optical damage. Although oxideconfined VCSELs have been employed in most of applications with VCSELs, ion-implanted VCSELs have a potential to be the better light sources for high power applications. In spite of the fact, the detailed characteristics of the ionimplanted VCSELs had been researched only in ten milliwatt-class output power. Here we report on a high power VCSEL-array with proton-implanted current apertures. A peak output power of over 40 W under short-pulse operation has been achieved. This is the first demonstration of ten watt-class output power for ion-implanted VCSELs.
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Hideyuki Naito, Hideyuki Naito, Masahiro Miyamoto, Masahiro Miyamoto, Yuta Aoki, Yuta Aoki, Akira Higuchi, Akira Higuchi, Kousuke Torii, Kousuke Torii, Takehito Nagakura, Takehito Nagakura, Takenori Morita, Takenori Morita, Junya Maeda, Junya Maeda, Hirofumi Miyajima, Hirofumi Miyajima, Harumasa Yoshida, Harumasa Yoshida, } "Development of a high-power vertical-cavity surface-emitting laser array with ion-implanted current apertures", Proc. SPIE 8639, Vertical-Cavity Surface-Emitting Lasers XVII, 86390N (13 March 2013); doi: 10.1117/12.2001589; https://doi.org/10.1117/12.2001589
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