5 March 2013 High modal gain 1.5 μm InP based quantum dot lasers: dependence of static properties on the active layer design
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Proceedings Volume 8640, Novel In-Plane Semiconductor Lasers XII; 864004 (2013) https://doi.org/10.1117/12.2002420
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
Based on a novel quantum dot (QD) growth technique, high density dot-like QDs were grown on (100)InAlGaAs/InP surfaces, which resulted in a strongly improved modal gain in 1.55 μm QD lasers. The influence of the number of QD layers on static properties, e.g., modal gain, threshold current density and spectral properties, are presented and discussed. For a large number of QD layers, e.g., 6 QD layers, a high modal gain of > 70cm-1 could be obtained. By reducing the number of QD layers, i.e., lowering the modal gain, the wavelength shift with temperature can be reduced to < 0.2 nm/K. Systematic dependence of laser properties on structural parameters is observed.
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Vitalii Sichkovskyi, Vitalii Sichkovskyi, Vitalii Ivanov, Vitalii Ivanov, Johann Peter Reithmaier, Johann Peter Reithmaier, } "High modal gain 1.5 μm InP based quantum dot lasers: dependence of static properties on the active layer design", Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 864004 (5 March 2013); doi: 10.1117/12.2002420; https://doi.org/10.1117/12.2002420
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