Sub-MHz linewidth of 633 nm diode lasers with internal surface DBR gratings

D. Feise; G. Blume; J. Pohl; B. Sumpf; H. Thiem; M. Reggentin; J. Wiedmann; K. Paschke

doi:10.1117/12.2002474

4 March 2013 Sub-MHz linewidth of 633 nm diode lasers with internal surface DBR gratings

D. Feise, G. Blume, J. Pohl, B. Sumpf, H. Thiem, M. Reggentin, J. Wiedmann, K. Paschke

Proceedings Volume 8640, Novel In-Plane Semiconductor Lasers XII; 86400A (2013) https://doi.org/10.1117/12.2002474
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Red-emitting diode lasers having a large coherence length with a tunable wavelength and a narrow spectral linewidth with an emission power in the 10 mW range are sought for a variety of techniques in applications such as spectroscopy, interferometry and holography. Currently, helium-neon lasers or diode lasers with external wavelength stabilization are widely used for these applications. By integrating a wavelength selective element into the ridge waveguide (RW) of the diode laser chip itself a high degree of miniaturization and stability can be reached. To this end, we have developed RW lasers with deeply etched surface distributed Bragg reflector (DBR) gratings in order to achieve a high-yield, singleepitaxy manufacturing process. These DBR lasers consist of a 1.5 mm RW gain section and a 500 μm grating section, which has a reflectivity of about 60%. The facets of the lasers were coated to achieve a reflectivity of 30% at the front and smaller than 0.1% at the rear facet. The diode lasers achieve an optical output power of 20 mW at an injection current of 150 mA and a heat-sink temperature of 15°C at a wavelength of 633 nm. The DBR enables single longitudinal mode operation over a wide range of operation conditions. Self-delayed heterodyne measurements were performed to measure the emission linewidth of these lasers using a 1 km long fiber, which gives a spectral resolution of about 100 kHz. A linewidth of less than 1 MHz was obtained. In reliability tests at 14 mW a lifetime of more than 1,700 h could be demonstrated, dedicating these devices to the above mentioned applications.

Citation Download Citation

D. Feise, G. Blume, J. Pohl, B. Sumpf, H. Thiem, M. Reggentin, J. Wiedmann, and K. Paschke "Sub-MHz linewidth of 633 nm diode lasers with internal surface DBR gratings", Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86400A (4 March 2013); https://doi.org/10.1117/12.2002474

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