4 March 2013 Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes
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Proceedings Volume 8640, Novel In-Plane Semiconductor Lasers XII; 86400H (2013) https://doi.org/10.1117/12.2004483
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
We demonstrate picosecond pulse generation in the blue-violet wavelength region by passive intra-cavity mode-locking in GaN-based ridge waveguide laser diodes with monolithically integrated absorbers. For cavity lengths of 1.2 and 0.6 mm we observe repetition frequencies of 40 and 90 GHz, and pulse lengths of 7 and 4 ps, respectively. The results are explained by an extremely short, tunneling dominated carrier life time in the saturable absorber at high negative bias. The fast depletion of the charge carriers in the absorber is investigated by bias-dependent life-time measurements in the absorber.
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Thomas Weig, Thomas Weig, Ulrich T. Schwarz, Ulrich T. Schwarz, Luca Sulmoni, Luca Sulmoni, Jean-Michel Lamy, Jean-Michel Lamy, Jean-François Carlin, Jean-François Carlin, Nicolas Grandjean, Nicolas Grandjean, Dmitri Boiko, Dmitri Boiko, } "Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes", Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86400H (4 March 2013); doi: 10.1117/12.2004483; https://doi.org/10.1117/12.2004483
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