4 March 2013 Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers
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Proceedings Volume 8640, Novel In-Plane Semiconductor Lasers XII; 86401F (2013) https://doi.org/10.1117/12.2003465
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
Mechanisms are addressed limiting the reliability high-power diode lasers. An overview is given on the kinetics of the Catastrophic Optical Damage (COD) process, which is related to highest output powers. It involves fast defect growth fed by re-absorption of laser light. Local temperatures reach the order of the melting temperature of the waveguide of the device. The process starts either at a facet or at any weak point, e.g., at extended defects in the interior of the cavity.
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Jens W. Tomm, Jens W. Tomm, Martin Hempel, Martin Hempel, Fabio La Mattina, Fabio La Mattina, Frank M. Kießling, Frank M. Kießling, Thomas Elsaesser, Thomas Elsaesser, } "Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers ", Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86401F (4 March 2013); doi: 10.1117/12.2003465; https://doi.org/10.1117/12.2003465
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