4 March 2013 980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth
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Proceedings Volume 8640, Novel In-Plane Semiconductor Lasers XII; 86401U (2013) https://doi.org/10.1117/12.2004336
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
This paper reports on the mode-locked operation of a 980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth. Optical pulses with 10-ps pulse duration were generated at a repetition rate of 955 MHz, with an average output power of 39.3 mW – which corresponds to a peak power of 4.1 W, generated directly from the oscillator. The RF spectrum displays a -3dB RF linewidth of only ~40 Hz, as well as a 60-dB dynamic contrast, revealing the exceptionally low-noise fundamental mode-locked operation of this laser. At a repetition rate of ~1 GHz, the highest peak power of 5.26 W was achieved, albeit with an increased -3dB RF linewidth of ~100 Hz. The two-section chip incorporated an active region with a dual InGaAs quantum well sandwiched by an asymmetrical waveguide, and was operated at room temperature. By taking advantage of the broad tunability of the repetition rate which externalcavity lasers can afford, we also investigated the limits of stable fundamental mode-locked operation at the lowest repetition rates (or maximum external cavity lengths).
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ying Ding, Ying Ding, Wei Ji, Wei Ji, Jingxiang Chen, Jingxiang Chen, Song Zhang, Song Zhang, Xiaoling Wang, Xiaoling Wang, Huolei Wang, Huolei Wang, Haiqiao Ni, Haiqiao Ni, Jiaoqing Pan, Jiaoqing Pan, Bifeng Cui, Bifeng Cui, Maria Ana Cataluna, Maria Ana Cataluna, } "980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth", Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86401U (4 March 2013); doi: 10.1117/12.2004336; https://doi.org/10.1117/12.2004336
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