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4 March 2013Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode
InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and
characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results
show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness
from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect
becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well
thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved
by increasing the well thickness.
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Bing Xu, Jun Liang Zhao, Shu Guo Wang, Hai Tao Dai, Sheng-Fu Yu, Ray-Ming Lin, Fu-Chuan Chu, Chou-Hsiung Huang, Xiao Wei Sun, "Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode," Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 864103 (4 March 2013);