4 March 2013 Direct green LED development in nano-patterned epitaxy
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Blue LED progress has laid the ground works of nitride technology to tackle the higher challenge of longer wavelength direct emitters of green, yellow, and orange. Use of bulk GaN substrate allows leapfrogging epitaxy development and offers crystallographic planes that allow higher crystal perfection and a control over piezoelectric polarization. Their combination allows stabilization of emission wavelength with current. Further improvement is found in substrate patterning on the micro and nano-meter length scale where we find roughly equal performance enhancement due to both, enhancement in light extraction and enhanced crystalline perfection.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Wetzel, Christian Wetzel, Theeradetch Detchprohm, Theeradetch Detchprohm, "Direct green LED development in nano-patterned epitaxy", Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 864104 (4 March 2013); doi: 10.1117/12.2007613; https://doi.org/10.1117/12.2007613


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