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4 March 2013 NiO as hole transport layers for all-inorganic quantum dot LEDs
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Quantum dot light-emitting diodes (QD-LEDs) have recently attracted much attention due to its highly saturated emission color and the capability of tuning the emission color by means of engineering its size. In this letter, an allinorganic light-emitting diode based on colloidal core/shell CdS/ZnS nanocrystal quantum dots (QDs) emissive layer sandwiched between p-type NiO and n-type ZnO is reported. NiO and ZnO layers are deposited by means of the lowcost spin coating technique. The device showed a rectification behavior and QD light emission with the electroluminescent emissions at 605nm.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Y. Tang, X. L. Zhang, H. T. Dai, J. L. Zhao, S. G. Wang, and X. W. Sun "NiO as hole transport layers for all-inorganic quantum dot LEDs", Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 86410H (4 March 2013);

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