4 March 2013 Light extraction efficiency enhancement for InGaN quantum wells light-emitting diodes with GaN micro-domes
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Abstract
The enhancement of light extraction efficiency for thin-film-flip-chip (TFFC) InGaN QWs LEDs with GaN microdomes on n-GaN layer was studied. The three dimensional FDTD method was used to calculate the light extraction efficiency for the TFFC InGaN QWs LEDs emitting at visible spectral regime, as compared to that of the conventional TFFC InGaN QWs LEDs. The calculation indicates significant dependence of the p-GaN layer thickness on the light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λpeak=460nm and 2.7- 2.8 times for λpeak=550nm) is achievable from LEDs with GaN micro-domes with optimized micro-dome diameter and height.
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Peng Zhao, Peng Zhao, Lu Han, Lu Han, Hongping Zhao, Hongping Zhao, } "Light extraction efficiency enhancement for InGaN quantum wells light-emitting diodes with GaN micro-domes", Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 864117 (4 March 2013); doi: 10.1117/12.2002857; https://doi.org/10.1117/12.2002857
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