4 March 2013 Indium-zinc oxide transparent electrode for nitride-based light-emitting diodes
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Abstract
The basic properties of indium-zinc oxide (IZO) were investigated from the view point of the potential of light-emitting diodes (LEDs) for nanostructured transparent contact. The resistivity and contact resistance to p-GaN were obtained to be 2.5×10-4 Ωcm and 9.4×10-4 Ωcm2, respectively, which are comparable to those of indium-tin oxide (ITO). The light output of the LED with the moth-eye IZO was 10 % and 40 % higher than that of the LED with the moth-eye ITO and that of the LED without the moth-eye structure, respectively.
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S. Mizutani, S. Mizutani, S. Nakashima, S. Nakashima, M. Iwaya, M. Iwaya, T. Takeuchi, T. Takeuchi, S. Kamiyama, S. Kamiyama, I. Akasaki, I. Akasaki, T. Kondo, T. Kondo, F. Teramae, F. Teramae, A. Suzuki, A. Suzuki, T. Kitano, T. Kitano, M. Mori, M. Mori, M. Matsubara, M. Matsubara, } "Indium-zinc oxide transparent electrode for nitride-based light-emitting diodes", Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 86411Y (4 March 2013); doi: 10.1117/12.2003536; https://doi.org/10.1117/12.2003536
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