4 March 2013 Indium-zinc oxide transparent electrode for nitride-based light-emitting diodes
Author Affiliations +
The basic properties of indium-zinc oxide (IZO) were investigated from the view point of the potential of light-emitting diodes (LEDs) for nanostructured transparent contact. The resistivity and contact resistance to p-GaN were obtained to be 2.5×10-4 Ωcm and 9.4×10-4 Ωcm2, respectively, which are comparable to those of indium-tin oxide (ITO). The light output of the LED with the moth-eye IZO was 10 % and 40 % higher than that of the LED with the moth-eye ITO and that of the LED without the moth-eye structure, respectively.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Mizutani, S. Mizutani, S. Nakashima, S. Nakashima, M. Iwaya, M. Iwaya, T. Takeuchi, T. Takeuchi, S. Kamiyama, S. Kamiyama, I. Akasaki, I. Akasaki, T. Kondo, T. Kondo, F. Teramae, F. Teramae, A. Suzuki, A. Suzuki, T. Kitano, T. Kitano, M. Mori, M. Mori, M. Matsubara, M. Matsubara, } "Indium-zinc oxide transparent electrode for nitride-based light-emitting diodes", Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 86411Y (4 March 2013); doi: 10.1117/12.2003536; https://doi.org/10.1117/12.2003536

Back to Top