In the course of carrying out the present work, it was stated that a parasitic surface nano-structurization is peculiar to reflective relief-phase holograms obtained on thin layers of a chalcogenide glassy semiconductor (CGS). The results of experimental researches of the effect of a relief height for reflective relief-phase holograms on the parameters of their surface parasitic nano-structurization are presented in this paper. With the use of data obtained applying atomic force microscope (AFM) Solver P-47 and software complex “Nova”, it was defined a short-wave boundary for applicability of such holograms. In addition to the conventional software complex “Nova”, aiming at reducing time necessary for determination of a short-wave boundary for relief-phase hologram applicability, there was developed a software module, which operation is based on the determination of the averaged-out over a basic area (scanning area) relief profile shape of the hologram structure, the definition of root-mean-square roughness (RMSR) values of its surface averaged-out over the same basic area, and on the subsequent computation of the boundary wavelength for the hologram applicability. The determined short-wave boundary value came to 80nm. Starting from this value, the holograms with the relief height optimal from the view of maximal diffraction efficiency meet the Marechal’s criterion σ ≤ λ/27 (σ - rootmean- square roughness parameter) and the criterion of permitted light diffusion σ ≤ λ/100. Thus, the level of light diffusion and aberration permitted for precision optical systems is ensured in a reconstructed with their use image.