A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack

Y. Koda; R. Kuroda; T. Nakazawa; Y. Nakao; S. Sugawa

doi:10.1117/12.2005574

19 February 2013 A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack

Y. Koda, R. Kuroda, T. Nakazawa, Y. Nakao, S. Sugawa

Author Affiliations +

Proceedings Volume 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV; 86590J (2013) https://doi.org/10.1117/12.2005574
Event: IS&T/SPIE Electronic Imaging, 2013, Burlingame, California, United States

Abstract

In this work, by optimizing the structure and thickness of the on-chip multilayer dielectric stack using SiO₂ and low extinction coefficient Si₃N₄ with the high UV-light sensitivity photodiode technology, high external Q.E. and high stability to UV-light were both successfully obtained. By changing the structure of on-chip multilayer dielectric stack and film thickness, we obtained the photodiode with the high external Q.E. in the desired UV-light region.

Citation Download Citation

Y. Koda, R. Kuroda, T. Nakazawa, Y. Nakao, and S. Sugawa "A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack", Proc. SPIE 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, 86590J (19 February 2013); https://doi.org/10.1117/12.2005574

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