19 February 2013 A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack
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Abstract
In this work, by optimizing the structure and thickness of the on-chip multilayer dielectric stack using SiO2 and low extinction coefficient Si3N4 with the high UV-light sensitivity photodiode technology, high external Q.E. and high stability to UV-light were both successfully obtained. By changing the structure of on-chip multilayer dielectric stack and film thickness, we obtained the photodiode with the high external Q.E. in the desired UV-light region.
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Y. Koda, R. Kuroda, T. Nakazawa, Y. Nakao, S. Sugawa, "A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack", Proc. SPIE 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, 86590J (19 February 2013); doi: 10.1117/12.2005574; https://doi.org/10.1117/12.2005574
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