Evaluated Performances Of Ga0.96Al0.04Sb Avalanche Photodetectors

Henri Luquet; Michele Perotin; Leone Gouskov; David Magalion; Alain Jean; Pierre Silvestre

doi:10.1117/12.943588

1 January 1987 Evaluated Performances Of Ga0.96Al0.04Sb Avalanche Photodetectors

Henri Luquet, Michele Perotin, Leone Gouskov, David Magalion, Alain Jean, Pierre Silvestre

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943588
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

This paper presents an evaluation of the noise equivalent power (NEP) of 1.55 pm avalanche photodetectors based on Ga0.96 Al0.04 Sb, liquid phase epitaxy (LPE) grown junctions. Deduced from some measured photoelectrical parameters and from others publicated ones an optimum NEP of 3.5 x 10 -12 W/ √Hz is calculated for a doping level of 3 x 10 21 m-3.

Citation Download Citation

Henri Luquet, Michele Perotin, Leone Gouskov, David Magalion, Alain Jean, and Pierre Silvestre "Evaluated Performances Of Ga0.96Al0.04Sb Avalanche Photodetectors", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943588

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