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1 January 1987 Focused Ion Beams For Optoelectronic Technology: A Review.
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Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943573
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
Focused ion beams (FIB) systems allow maskless processes as n, p doping, isolation of semiconductors and selective disordering of GaAs-AlGaAs superiattices at submicronic scale. UHV compatiblility of FIB makes MBE/FIB coupling very promissing to build lasers and integrated optoelectronic structures. FIB machining of optical structures as laser mirrors can replace classical processes, with better control and comparable performances.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P Sudraud and G Ben Assayag "Focused Ion Beams For Optoelectronic Technology: A Review.", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943573
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