30 January 2013 GaSe damage threshold under IR pulse pumping
Author Affiliations +
Proceedings Volume 8677, XIX International Symposium on High-Power Laser Systems and Applications 2012; 86771E (2013) https://doi.org/10.1117/12.2008916
Event: XIX International Symposium on High-Power Laser Systems and Applications, 2012, Istanbul, Turkey
Abstract
Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er3+:YSGG and 10.6μm CO2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin Guo, Ji-Jiang Xie, Laiming Zhang, Fei Chen, Ke Jiang, Sergei V. Alexeev, Yury M. Andreev, Konstantin A. Kokh, Gregory V. Lanskii, Valery F. Losev, Dmitry M. Lubenko, Anna V. Shaiduko, Valeriy A. Svetlichnyi, "GaSe damage threshold under IR pulse pumping", Proc. SPIE 8677, XIX International Symposium on High-Power Laser Systems and Applications 2012, 86771E (30 January 2013); doi: 10.1117/12.2008916; https://doi.org/10.1117/12.2008916
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Analysis on the thermal effect of dual end pumped Tm...
Proceedings of SPIE (November 18 2014)
Doped GaSe nonlinear crystals
Proceedings of SPIE (June 09 2006)
Laser cables based on crystalline IR-fibers
Proceedings of SPIE (September 01 1990)
Efficient CO2 frequency doubling with Hg1-xCdxGa2S4
Proceedings of SPIE (February 23 2004)

Back to Top