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30 January 2013 GaSe damage threshold under IR pulse pumping
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Proceedings Volume 8677, XIX International Symposium on High-Power Laser Systems and Applications 2012; 86771E (2013) https://doi.org/10.1117/12.2008916
Event: XIX International Symposium on High-Power Laser Systems and Applications, 2012, Istanbul, Turkey
Abstract
Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er3+:YSGG and 10.6μm CO2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.
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Jin Guo, Ji-Jiang Xie, Laiming Zhang, Fei Chen, Ke Jiang, Sergei V. Alexeev, Yury M. Andreev, Konstantin A. Kokh, Gregory V. Lanskii, Valery F. Losev, Dmitry M. Lubenko, Anna V. Shaiduko, and Valeriy A. Svetlichnyi "GaSe damage threshold under IR pulse pumping", Proc. SPIE 8677, XIX International Symposium on High-Power Laser Systems and Applications 2012, 86771E (30 January 2013); https://doi.org/10.1117/12.2008916
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