11 December 2012 Imaging with plasma based extreme ultraviolet sources
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Proceedings Volume 8678, Short-Wavelength Imaging and Spectroscopy Sources; 86780F (2012) https://doi.org/10.1117/12.2011139
Event: Short-Wavelength Imaging and Spectroscopy, 2012, Bern, Switzerland
Abstract
The chapter addresses microscopy with plasma based laboratory extreme ultraviolet (EUV) and soft-x-ray sources. The focus is set on the determination of necessary source parameters like radiance and size from fundamental considerations of the achievable sample resolution, image contrast, detector quantum efficiency and required throughput. The estimations account for the influence of photon noise on signal detection and conservation of light etendue and radiant flux. Two cases are considered more detailed – resolution optimized bright field microscopy and sensitivity optimized dark field microscopy. Inspection of EUV masks and mask blanks required for EUV lithography at 13.5 nm wavelength is chosen as an illustration for both cases.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larissa Juschkin, Larissa Juschkin, } "Imaging with plasma based extreme ultraviolet sources", Proc. SPIE 8678, Short-Wavelength Imaging and Spectroscopy Sources, 86780F (11 December 2012); doi: 10.1117/12.2011139; https://doi.org/10.1117/12.2011139
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