1 April 2013 Effect of leaving group design on EUV lithography performance
Author Affiliations +
In this paper, we will describe some of our efforts on various leaving group designs and their impacts on resist performance, mainly focusing on the leaving group polarity, activation energy and molecular volume. The EUV lithographic performances of the newly designed leaving groups are evaluated on a standard methacrylate polymer bound photoacid generator (PBP) platform. With our low activation energy and hydrophobic leaving group PBP, we report good line and space and contact hole performance using the Albany eMET and LBNL BMET tool.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Owendi Ongayi, Owendi Ongayi, Vipul Jain, Vipul Jain, Suzanne M. Coley, Suzanne M. Coley, David Valeri, David Valeri, Amy Kwok, Amy Kwok, Dung Quach, Dung Quach, Mike Wagner, Mike Wagner, Jim Cameron, Jim Cameron, Jim Thackeray, Jim Thackeray, } "Effect of leaving group design on EUV lithography performance", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867907 (1 April 2013); doi: 10.1117/12.2011600; https://doi.org/10.1117/12.2011600

Back to Top