CONFERENCE PROCEEDINGS
Advanced Search >
Home > Proceedings > Volume 8679 > Article
8 April 2013 LPP-EUV light source development for high volume manufacturing lithography
Hakaru Mizoguchi, Hiroaki Nakarai, Tamotsu Abe, Takeshi Ohta, Krzysztof M. Nowak, Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Tsukasa Hori, Takeshi Kodama, Yutaka Shiraishi, Tatsuya Yanagida, Tsuyoshi Yamada, Taku Yamazaki, Shinji Okazaki, Takashi Saitou
Author Affiliations +
Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86790A (2013) https://doi.org/10.1117/12.2014139
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States
Abstract
Since 2002, we have been developing a CO2-Sn-LPP EUV light source, the most promising solution as the 13.5 nm high power (>200 W) light source for HVM EUV lithography. Because of its high efficiency, power scalability and spatial freedom around plasma, we believe that the CO2-Sn-LPP scheme is the most feasible candidate as the light source for EUVL. By now, our group has proposed several unique original technologies such as CO2 laser driven Sn plasma generation, double laser pulse shooting for higher Sn ionization rate and higher CE, Sn debris mitigation with a magnetic field, and a hybrid CO2 laser system that is a combination of a short pulse oscillator and commercial cw-CO2 amplifiers. The theoretical and experimental data have clearly demonstrated the advantage of combining a laser beam at a wavelength of the CO2 laser system with Sn plasma to achieve high CE from driver laser pulse energy to EUV in-band energy. Combination of CO2 laser power and droplet generator improvements on new EUV chamber (Proto-2) enables stable EUV emission. EUV burst operation data shows stable average 10.2W(clean power @ I/F) EUV emission and maximum 20.3W(clean power @ I/F) was demonstrated. For future HVM the maximum of 4.7% CE with a 20 μm droplet are demonstrated by ps pre-pulse LPP. Also reported 40kW CO2 laser development project cooperate with Mitsubishi electric.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Hakaru Mizoguchi, Hakaru Mizoguchi, Hiroaki Nakarai, Hiroaki Nakarai, Tamotsu Abe, Tamotsu Abe, Takeshi Ohta, Takeshi Ohta, Krzysztof M. Nowak, Krzysztof M. Nowak, Yasufumi Kawasuji, Yasufumi Kawasuji, Hiroshi Tanaka, Hiroshi Tanaka, Yukio Watanabe, Yukio Watanabe, Tsukasa Hori, Tsukasa Hori, Takeshi Kodama, Takeshi Kodama, Yutaka Shiraishi, Yutaka Shiraishi, Tatsuya Yanagida, Tatsuya Yanagida, Tsuyoshi Yamada, Tsuyoshi Yamada, Taku Yamazaki, Taku Yamazaki, Shinji Okazaki, Shinji Okazaki, Takashi Saitou, Takashi Saitou, "LPP-EUV light source development for high volume manufacturing lithography", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790A (8 April 2013); doi: 10.1117/12.2014139; https://doi.org/10.1117/12.2014139
ACCESS THE FULL ARTICLE
PERSONAL SIGN IN
Full access may be available with your subscription
 
Forgot your username?
Forgot your password?
No SPIE account? Create an account
or Institutional Sign In via Shibboleth
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $14.40
Non-members: $18.00 ADD TO CART
PROCEEDINGS
 11 PAGES
DOWNLOAD PDF + SAVE TO MY LIBRARY
SHARE
GET CITATION
< Previous Article
|
Next Article >
KEYWORDS
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top